产品分类：半导体 - 分立器件,规格：功耗 Pd 830mW,
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1 ohm, 4 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)
VISHAY
Transistor Polarity:Dual N Channel
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.1 ohm, 4.5 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N+P沟道, 20V, TSOP
(EN)
VISHAY
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -12 V, 0.016 ohm, -4.5 V, -900 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -12 V, 0.016 ohm, -4.5 V, -900 mV
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 3.1A, TSSOP-8, 整卷
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.024 ohm, -10 V, -1 V
(EN)
