产品分类：半导体 - 分立器件,品牌：STMICROELECTRONICS,规格：晶体管封装类型 TO-220FP,
STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 1 kV, 1.6 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 引脚
(EN)
