产品分类：半导体 - 分立器件,规格：晶体管封装类型 TO-3P,
RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 70 A, 100 V, 23 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -36 A, -150 V, 90 mohm, -10 V, -4 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 18.5 A, 600 V, 380 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 250 V, 49 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V
(EN)
TOSHIBA
单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 70 A, 60 V, 5.8 mohm, 10 V, 4 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3P-3
(EN)RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 7 A, 70 hFE
(EN)SEMELAB
单晶体管 双极, 音频, NPN, 230 V, 60 MHz, 300 W, 18 A, 70 hFE
(EN)
NTE ELECTRONICS
双极性晶体管
(EN)
