产品分类：半导体 - 分立器件,品牌：INFINEON,规格：晶体管封装类型 SOT-223,
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 65 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 500 V, 0.72 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.8 ohm, 13 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.59 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 0.048 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
单晶体管 双极, NPN, 60 V, 100 MHz, 3 W, 3 A, 85 hFE
(EN)INFINEON
单晶体管 双极, NPN, 60 V, 100 MHz, 3 W, 3 A, 85 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V
(EN)
