产品分类：半导体 - 分立器件,规格：晶体管封装类型 TO-251,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 100V D-PAK
(EN)
ON SEMICONDUCTOR
功率晶体管, PNP, -100V, D-PAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 3 MHz, 20 W, -6 A, 15 hFE
(EN)
NTE ELECTRONICS
双极性晶体管, PNP, 400V V(BR)CEO, 2A I(C),TO-251VAR
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)NTE ELECTRONICS
双极性晶体管, NPN, 50V, TO-251
(EN)
