产品分类：半导体 - 分立器件,品牌：STMICROELECTRONICS,规格：晶体管封装类型 TO-263,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.35 V, 150 W, 390 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 150 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 80 W, 8 A, 18 hFE
(EN)
STMICROELECTRONICS
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 Pins
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚
(EN)
