产品分类：半导体 - 分立器件,品牌：IXYS SEMICONDUCTOR,规格：晶体管极性 N沟道,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.39 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 190 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 38 A, 600 V, 70 mohm, 10 V, 3.9 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, X2-Class, N沟道, 76 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 165 A, 2.6 V, 690 W, 1.2 kV, SOT-227B
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 112 A, 500 V, 0.039 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 90 A, 2.2 V, 190 W, 1.2 kV, Y4-M5
(EN)IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 100 A, 2.3 V, 450 W, 1.2 kV, SOT-227B
(EN)IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 134 A, 3.5 V, 690 W, 1.2 kV, SOT-227B
(EN)IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 105 A, 3.2 V, 500 W, 1.2 kV, SOT-227B
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 160 A, 2.2 V, 700 W, 1.2 kV, Y4-M5
(EN)
