产品分类：半导体 - 分立器件,规格：晶体管极性 N沟道,
NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, N沟道, 5 A, 70 V, 0.2 ohm, 10 V, 55 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
VISHAY
单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, X2-Class, N沟道, 76 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)
WOLFSPEED
单晶体管 双极, 6件, N沟道, 87 A, 1.2 kV, 0.025 ohm, 20 V, 2.3 V
(EN)
SEMIKRON
单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 112 A, 500 V, 0.039 ohm, 10 V, 5 V
(EN)
SEMIKRON
单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, N沟道, 30 A, 40 V, 0.0076 ohm, 10 V, 3.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 6 A, 30 V, 0.0155 ohm, 10 V, 2.2 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V
(EN)
ROHM
单晶体管 双极, N沟道, 180 A, 1.2 kV, 2.7 V
(EN)NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
双路场效应管, MOSFET, N沟道, 105 A, 25 V, 0.0012 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, N沟道, 303 A, 25 V, 0.0007 ohm, 10 V, 1.6 V
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 160 A, 2.2 V, 700 W, 1.2 kV, Y4-M5
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 40 A, 2.1 V, 1.05 kW, 1.2 kV, SEMITOP 3
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 22 A, 3 V, 145 W, 1.2 kV, SEMITRANS 6
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, IGBT阵列&模块, N沟道, 15 A, 600 V, 44 W, SDIP
(EN)
