产品分类：半导体 - 分立器件,搜索词：20 5,
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOP
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 24 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
