
VISHAY
晶体管, N沟道

STMICROELECTRONICS
快速/超快二极管, 单, 600 V, 5 A, 1.85 V, 50 ns, 55 A

NEXPERIA
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -100 V, 410 mohm, -10 V, -4 V

INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V

MULTICOMP
齐纳二极管, 15V, 200mW, SOD-323

ON SEMICONDUCTOR/FAIRCHILD
标准功率二极管, 单, 1 kV, 2 A, 1.15 V, 2 μs, 50 A

SOLID STATE
整流二极管, 标准型, 3A, 600V, G-4

TAIWAN SEMICONDUCTOR
二极管, 桥接稳压器, 1相, 400V, 10A, SIP

VISHAY
MOSFET, P CHANNEL, -20V, -6A, SOT-23-3

TAIWAN SEMICONDUCTOR
快速/超快二极管, 单, 200 V, 1 A, 950 mV, 35 ns, 30 A

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 33 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V

ON SEMICONDUCTOR
小信号肖特基二极管, 单, 30 V, 100 mA, 525 mV, 1 A, 125 °C

NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -100 V, 90 MHz, 1.5 W, -10 A, 10 hFE

INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

DIODES INC.
单管二极管 齐纳, 精准, 7.5 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

DIODES INC.
小信号肖特基二极管, 单, 40 V, 520 mA, 610 mV, 12 A, 150 °C

VISHAY
标准恢复二极管, 单, 100 V, 2 A, 980 mV, 25 ns, 50 A

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8

INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V

IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4.5 V

NEXPERIA
肖特基整流器, 单, 40 V, 2 A, SOT-1061, 3 引脚, 535 mV