
STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1 V, TO-263, 160 A

MULTICOMP
标准功率二极管, 单, 1 kV, 1 A, 470 mV, 30 A

DIODES INC.
单管二极管 齐纳, 4.7 V, 500 mW, SOD-123, 6 %, 2 引脚, 150 °C

INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

INFINEON
场效应管, MOSFET, N沟道, HEXFET, 60V, 79A, D2PAK

NTE ELECTRONICS
快速恢复二极管, 3A, 600V DO-41

NEXPERIA
单管二极管 齐纳, 15 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C

TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 400 V, 1 A, SMD, 1.1 V, 4 引脚

INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V

INFINEON
晶体管, MOSFET, N沟道, 94 A, 200 V, 23 mohm, 10 V, 5 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V

STMICROELECTRONICS
触发二极管, DIAC / SIDAC, 28 V, 36 V, 100 μA, DO-35, 2 引脚

VISHAY
快速/超快二极管, 双共阴极, 200 V, 30 A, 1.05 V, 35 ns, 200 A

NEXPERIA
小信号肖特基二极管, 单, 20 V, 1 A, 620 mV, 6 A, 150 °C

MULTICOMP
肖特基整流器, 30 V, 5 A, 单, DO-201AA, 2 引脚, 550 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V

TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 13 V, 800 mW, SMD, 2 引脚, 175 °C

TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 单, 600 V, 1 A, 1.7 V, 35 ns, 30 A

VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V

VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V

ON SEMICONDUCTOR
双极性晶体管, PNP, -100V, TO-220

MULTICOMP
齐纳二极管, 43V, 500mW, SOD-123

VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V

NEXPERIA
单管二极管 齐纳, 3.9 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
晶体管, PNP