
NEXPERIA
晶体管, MOSFET, N沟道, 31.8 A, 30 V, 0.0205 ohm, 4.5 V, 1.62 V

STMICROELECTRONICS
快速/超快功率二极管, 600 V, 2 A, 单, 1.3 V, 85 ns, 35 A

DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

MULTICOMP
快速/超快功率二极管, 600 V, 3 A, 单, 1.7 V, 35 ns, 125 A

ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 3 MHz, 40 W, 3 A, 10 hFE

VISHAY
齐纳二极管, 500mW, 6.8V, SOD-80

VISHAY
单管二极管 齐纳, 47 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 350 V, 10 MHz, 2 W, 1 A, 150 hFE

STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18

DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 6.2 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C

ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 40 W, -4 A, 750 hFE

TAIWAN SEMICONDUCTOR
肖特基整流器, 单, 60 V, 1 A, DO-204AL, 2 引脚, 700 mV

NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

TAIWAN SEMICONDUCTOR
标准功率二极管, 600 V, 1 A, 单, 1.1 V, 30 A

MULTICOMP
桥式整流器, 单相, 50A, 600V 快接式

ON SEMICONDUCTOR
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET

VISHAY
单管二极管 齐纳, 10 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

DIODES INC.
快速/超快二极管, 单, 400 V, 1 A, 1.25 V, 25 ns, 30 A

DIODES INC.
快速/超快二极管, 单, 400 V, 1 A, 1.3 V, 25 ns, 30 A

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V