
VISHAY
快速/超快功率二极管, 600 V, 15 A, 单, 3.2 V, 22 ns, 170 A

MULTICOMP
快速/超快功率二极管, 600 V, 1 A, 单, 1.35 V, 60 ns, 35 A

INFINEON
晶体管, MOSFET, N沟道, 80 A, 49 V, 0.0058 ohm, 10 V, 1.6 V

MULTICOMP
单管二极管 齐纳, 18 V, 1 W, DO-214AC, 2 引脚, 150 °C

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V

TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.22 ohm, 10 V, 5 V

INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR
肖特基整流器, 通用, 10 V, 1 A, 单, DO-216AA, 2 引脚, 365 mV

ON SEMICONDUCTOR
双极晶体管

ON SEMICONDUCTOR
单管二极管 齐纳, 18 V, 300 mW, SOT-23, 2 %, 3 引脚, 150 °C

MULTICOMP
单管二极管 齐纳, 56 V, 1 W, DO-214AC, 2 引脚, 150 °C

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V

WEEN SEMICONDUCTOR
三端双向可控硅, 800 V, 10 mA, 2 W, 1.3 V, SOT-223, 13.8 A

ON SEMICONDUCTOR
快速/超快二极管, 单, 200 V, 8 A, 1.25 V, 35 ns, 100 A

TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 18 V, 1 W, DO-41 (DO-204AL), 5 %, 2 引脚, 150 °C

NEXPERIA
小信号肖特基二极管, 双共阳极, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

MULTICOMP
单晶体管 双极, 达林顿, NPN, 100 V, 6 MHz, 125 W, 16 A

VISHAY
桥式整流器, 单相, 15A, 600V, GSIB-5

INFINEON
晶体管 双极-射频, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100 hFE

MULTICOMP
单管二极管 齐纳, 62 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C

INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V