
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR
单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V

NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 14A

ON SEMICONDUCTOR
肖特基整流器, 35 V, 5 A, 双共阴极, TO-252, 4 引脚, 470 mV

TAIWAN SEMICONDUCTOR
肖特基整流器, 单, 30 V, 12 A, DO-201AD, 2 引脚, 550 mV

INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V

INFINEON
功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V

ON SEMICONDUCTOR
肖特基整流器, 共阴极, 20A TO-220

ON SEMICONDUCTOR
快速/超快功率二极管, 单, 600 V, 2 A, 1.45 V, 75 ns, 30 A

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm

NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V

ROHM
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363

WEEN SEMICONDUCTOR
三端双向可控硅, 600 V, 7 mA, 2 W, 1.3 V, TO-92, 13.8 A

TAIWAN SEMICONDUCTOR
标准恢复二极管, 玻璃钝化, 单, 400 V, 800 mA, 1.3 V, 150 ns, 30 A

VISHAY
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V

NEXPERIA
单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C

DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V

INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER