
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 85A

ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, TO-78

STMICROELECTRONICS
小信号肖特基二极管, 单, 100 V, 30 A, 840 mV, 250 A, 150 °C

STMICROELECTRONICS
快速/超快二极管, 单, 1 kV, 8 A, 2 V, 85 ns, 60 A

DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V

NEXPERIA
单管二极管 齐纳, 5.1 V, 400 mW, DO-35, 2 %, 2 引脚, 200 °C

NEXPERIA
单管二极管 齐纳, 30 V, 250 mW, SOT-23, 1 %, 3 引脚, 150 °C

VISHAY
场效应管, MOSFET, N沟道

INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V

ON SEMICONDUCTOR
晶体管, NPN

VISHAY
肖特基整流器, 单, 100 V, 8 A, TO-277A, 3 引脚, 900 mV

STMICROELECTRONICS
Silicon Carbide Schottky Diode, 600V Series, Single, 600 V, 6 A, 6 nC, TO-263

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.088 ohm, 10 V, 2.5 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-247AC

ON SEMICONDUCTOR
快速/超快功率二极管, 1 kV, 8 A, 单, 1.8 V, 75 ns, 100 A

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 100 V, 30 mohm, 10 V, 2.5 V

NEXPERIA
晶体管 双极-射频, PNP, -65 V, 100 MHz, 200 mW, -100 mA, 475 hFE

VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -100 V, 300 mohm, -10 V, -4 V

NEXPERIA
晶体管 双极-射频, NPN, 20 V, 275 MHz, 250 mW, 25 mA, 85 hFE

ON SEMICONDUCTOR
标准功率二极管, 单, 1 kV, 3 A, 1 V, 200 A

NXP
晶体管 双极-射频, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0023 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45 A, 150 V, 34 mohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, 汽车, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V

STMICROELECTRONICS
肖特基整流器