
INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 5.8 mohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.02 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V

VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W

VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.31 ohm, 10 V, 3 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V

STMICROELECTRONICS
三端双向可控硅, 800 V, 35 mA, 1 W, 1.3 V, TO-263, 120 A

INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 190 mohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V

DIODES INC.
晶体管, MOSFET, N沟道, 260 mA, 240 V, 6 ohm, 10 V, 1.3 V

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 25 W, 10 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.036 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 23 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 600 V, 8 A, 2.4 V, 30 ns, 100 A

ON SEMICONDUCTOR
肖特基整流器, 100 V, 20 A, 双共阴极, TO-263, 3 引脚, 830 mV

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.002 ohm, 10 V, 1.7 V

VISHAY
晶体管, MOSFET, N沟道, 4.1 A, 60 V, 0.082 ohm, 10 V, 3 V

NEXPERIA
单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C

MULTICOMP
二极管, 快速恢复型, 400mA, 250V, SOD-323-2

PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 9.1 V, 200 mW, SOD-323F, 2 引脚, 150 °C

INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V

NEXPERIA
单晶体管 双极, PNP, 100 V, 300 mW, 1 A, 150 hFE

STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 60 V, 40 W, 4 A, 750 hFE

VISHAY
快速/超快功率二极管, 单, 800 V, 1 A, 1.7 V, 75 ns, 30 A