
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.8 A, 600 V, 1.8 ohm, 10 V, 3.9 V

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.027 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR
晶体管, 射频FET, 15 V, 50 mA, 200 mW, SOT-23

ROHM
二极管 小信号, 双共阴极, 80 V, 150 mA, 1 V, 4 ns, 6 A

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V

INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V

NTE ELECTRONICS
标准二极管, 250MA, 200V, DO-35

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 120 V, 160 mohm, 10 V, 3 V

TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 200 V, 1 A, SMD, 1.1 V, 4 引脚

NEXPERIA
小信号肖特基二极管, 单, 20 V, 1 A, 550 mV, 5 A, 125 °C

VISHAY
晶体管, N沟道

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR
单管二极管 齐纳, 24 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V

VISHAY
场效应管, P通道, MOSFET, -40V, 40A

VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

DIODES INC.
单管二极管 齐纳, 2 V, 200 mW, SOD-323, 4 %, 2 引脚, 150 °C

VISHAY
标准功率二极管, 单, 800 V, 40 A, 1.05 V, 475 A

VISHAY
标准二极管, 3A, 400V, DO-201AD

DIODES INC.
二极管 小信号, 双隔离, 75 V, 300 mA, 1.25 V, 4 ns, 4.5 A

IXYS SEMICONDUCTOR
晶闸管, 1600 V, 100 mA, 48 A, 75 A, TO-247AD, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V