
INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 16 mohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V

MULTICOMP
二极管 桥式整流, 单相, 600 V, 15 A, 模块, 1.1 V, 4 引脚

NEXPERIA
单晶体管 双极, NPN, 150 V, 33 MHz, 730 mW, 2 A, 240 hFE

LITTELFUSE
三端双向可控硅, 800 V, 12 A, TO-220AB, 50 mA, 1.3 V

ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V

STMICROELECTRONICS
三端双向可控硅, 1.2 kV, 50 mA, 1 W, 1.3 V, TO-263

STMICROELECTRONICS
单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 22A, TO-220F

INFINEON
功率场效应管, MOSFET, N沟道, 9.9 A, 600 V, 0.54 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.26 ohm, 10 V, 3 V

NTE ELECTRONICS
射频晶体管, PNP, -16V, 700MHZ, TO-72

LITTELFUSE
三端双向可控硅, 600 V, 15 A, TO-220AB, 50 mA, 2 V

VISHAY
场效应管, MOSFET, N沟道, 60V, 4.1A, TSOP

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3780 μohm, 5 V, 1.7 V

PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 18 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C

INFINEON
功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 20A, TO-220FP

MULTICOMP
二极管 桥式整流, 单相, 1 kV, 35 A, 模块, 1.1 V, 4 引脚

LITTELFUSE
三端双向可控硅, 800 V, 16 A, TO-220AB, 50 mA, 2 V

VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V