
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V

VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V

ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -120 V, 30 Hz, 50 W, -8 A, 40 hFE

VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3

INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 8 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管, VZ:8.2V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -30 V, 150 MHz, 500 mW, -100 mA, 200 hFE

DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V

INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

VISHAY
二极管 桥式整流, 单相, 400 V, 4 A, SIP, 1 V, 4 引脚

NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 520 mW, -1 A, 220 hFE

MULTICOMP
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 125 W, 25 A, 25 hFE

VISHAY
单管二极管 齐纳, QuadroMELF, 1.8 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C

VISHAY
快速/超快功率二极管, 单, 600 V, 8 A, 2.1 V, 40 ns, 90 A

VISHAY
齐纳二极管, 2.7V, 300mW, SOT-23

MULTICOMP
快速/超快二极管, 200 V, 2 A, 单, 950 mV, 35 ns, 50 A

INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V

NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 65 W, 6 A, 15 hFE

INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V

NEXPERIA
二极管 小信号, 单, 100 V, 215 mA, 1.25 V, 4 ns, 4 A

VISHAY
晶体管, JFET, JFET, -70 V, 30 μA, 90 μA, -1.8 V, TO-206AF, JFET

VISHAY
放大器, JFET, N沟道