产品分类：半导体 - 分立器件,
VISHAY
快速/超快功率二极管, 单, 600 V, 5 A, 1.85 V, 25 ns, 70 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)
DIODES INC.
单管二极管 齐纳, 4.7 V, 200 mW, SOD-323, 6 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
功率晶体管
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 50 W, 10 A, 60 hFE
(EN)INFINEON
单晶体管, IGBT, 25 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0042 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-263, 3 引脚
(EN)
VISHAY
标准功率二极管, 单, 600 V, 15 A, 1.05 V, 190 ns, 250 A
(EN)
VISHAY
快速/超快二极管, 双共阴极, 200 V, 4 A, 950 mV, 25 ns, 90 A
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 12 A, 20000 hFE
(EN)
DIODES INC.
单管二极管 齐纳, 2.4 V, 200 mW, SOD-323, 8 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1 V, TO-220AB, 270 A
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)
VISHAY
快速/超快二极管, 200 V, 150 A, 单, 1.13 V, 34 ns, 1.6 kA
(EN)
