
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A

DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V

INFINEON
标准功率二极管, 单, 650 V, 15 A, 1.6 V, 30 ns, 100 A

INFINEON
单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V

NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V

ROHM
晶体管, MOSFET, P沟道, -39 A, -30 V, 0.0061 ohm, -10 V, -2.5 V

VISHAY
超快速功率整流器

VISHAY
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.6 V, 500 W, 600 V, ISOTOP

VISHAY
二极管 桥式整流, 单相, 600 V, 25 A, 模块, 1.1 V, 4 引脚

ON SEMICONDUCTOR
二极管 小信号, 双系列, 70 V, 215 mA, 1.25 V, 6 ns, 500 mA

INFINEON
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 4 MHz, 200 W, -25 A, 4 hFE

MULTICOMP
单晶体管 双极, NPN, 100 V, 75 W, 8 A, 20000 hFE

NEXPERIA
单管二极管 齐纳, 30 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C

TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V

PANASONIC ELECTRONIC COMPONENTS
小信号肖特基二极管, 单, 50 V, 200 mA, 550 mV, 1 A, 125 °C

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V

DIODES INC.
单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE

VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V

ROHM
单管二极管 齐纳, 110 V, 1 W, SOD-123FL, 2 引脚, 150 °C

ROHM
肖特基整流器, 150 V, 40 A, 双共阴极, TO-263, 3 引脚, 920 mV

RENESAS
单晶体管, IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 引脚

LITTELFUSE
可控硅晶闸管, 3.8A, 400V, TO-220AB