产品分类：半导体 - 分立器件,
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 1 A, 10 kohm
(EN)
ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)ROHM
双极晶体管阵列, PNP, -50 V, 150 mW, -150 mA, 120 hFE, EMT
(EN)
ROHM
晶体管 双极预偏置/数字, 双路, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
智能电源模块, IGBT, 30A, 600V, SPMGA-027
(EN)
ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 双路, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 22 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.17 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 300 V, 26 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.65 V, 223 W, 600 V, TO-247, 3 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 400V, TO-220
(EN)
