
VISHAY
可控硅晶闸管, 25A, 600V, D-19

DIODES INC.
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V

ON SEMICONDUCTOR
单管二极管 齐纳, 3.3 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 0.039 ohm, -4.5 V, -1 V

VISHAY
二极管, 标准, 6A, 1KV, P600, 整卷

ON SEMICONDUCTOR/FAIRCHILD
小信号二极管, 85V, 200mA

ON SEMICONDUCTOR
达林顿晶体管, NPN, 500mA, 40V, 整卷

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -60 V, 75 MHz, 800 mW, -2 A, 40 hFE

IXYS SEMICONDUCTOR
二极管模块, 1.6 kV, 25 A, 1.36 V, 单路

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV

INFINEON
晶体管, IGBT阵列&模块, N沟道, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module

INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V

NTE ELECTRONICS
双极性晶体管, NPN, 350V

ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

VISHAY
晶闸管, 600 V, 60 mA, 40 A, 模块, 6 引脚

ON SEMICONDUCTOR
标准恢复二极管, 单, 400 V, 3 A, 1 V, 200 A

NEXPERIA
二极管 小信号, 双共阴极, 100 V, 215 mA, 1.25 V, 4 ns, 4 A

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

STMICROELECTRONICS
单晶体管 双极, NPN, 200 V, 250 W, 100 A, 27 hFE

ON SEMICONDUCTOR
单管二极管 齐纳, 5.6 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3

NEXPERIA
单管二极管 齐纳, 9.1 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C

NTE ELECTRONICS
标准二极管, 2.9A, 1KV, 轴向引线