产品分类：半导体 - 分立器件,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 900mA, SOT-23, 整卷
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 285 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 515 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.7 V, 105 W, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 700 A, 1.3 V, 1.55 kW, 650 V, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
肖特基整流器, 单, 45 V, 10 A, TO-277A, 3 引脚, 440 mV
(EN)
VISHAY
二极管 小信号, 双系列, 300 V, 225 mA, 1 V, 50 ns, 4 A
(EN)
VISHAY
二极管 小信号, 单, 300 V, 225 mA, 1 V, 50 ns, 4 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, IGBT, 600V, 14A
(EN)
INFINEON
Silicon Carbide Schottky Diode, IDD08 Series, Single, 600 V, 8 A, 12 nC, TO-252
(EN)
INFINEON
单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)
VISHAY
小信号肖特基二极管, 单, 30 V, 200 mA, 450 mV, 4 A, 125 °C
(EN)
VISHAY
小信号肖特基二极管, 单, 40 V, 200 mA, 600 mV, 15 A, 125 °C
(EN)
