
NXP
射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23

INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN

ON SEMICONDUCTOR
标准二极管, 1A, 800V, 59-10

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V

ROHM
晶体管 双极预偏置/数字, PNP, 双路 PNP, -50 V, -100 mA, 10 kohm

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V

NXP
双极性晶体管, 中功率, PNP, -45V, -1A, 4-SOT-223

TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8

VISHAY
单管二极管 齐纳, 15 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V

VISHAY
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V

VISHAY
开关二极管, 1.5A 400V DO-214AA

INFINEON
场效应管, MOSFET

VISHAY
Transistor Polarity:N Channel

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 48A TO-220AB

MULTICOMP
单管二极管 齐纳, 39 V, 200 mW, SOD-323, 2 引脚, 150 °C

MULTICOMP
单管二极管 齐纳, 16 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP
单管二极管 齐纳, 30 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP
单管二极管 齐纳, 6.2 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP
快速/超快二极管, 100 V, 2 A, 单, 950 mV, 35 ns, 50 A

MULTICOMP
快速/超快二极管, 50 V, 3 A, 单, 950 mV, 35 ns, 100 A

NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

MULTICOMP
快速/超快二极管, 50 V, 1 A, 单, 1 V, 50 ns, 30 A