INTERNATIONAL RECTIFIER

STMICROELECTRONICS

芯片, 超快速整流器

ROHM

单管二极管 齐纳, 16 V, 150 mW, SOD-523, 2 引脚, 150 °C

VISHAY

场效应管, MOSFET, N沟道

STMICROELECTRONICS

Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 10 A, 28.5 nC, TO-263

VISHAY

单管二极管 齐纳, AEC-Q101, 16 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C

NEXPERIA

单晶体管 双极, PNP, -45 V, 145 MHz, 420 mW, -1 A, 63 hFE

NEXPERIA

单晶体管 双极, PNP, -45 V, 145 MHz, 420 mW, -1 A, 40 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 420 mW, -1 A, 63 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 420 mW, -1 A, 40 hFE

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 420 mW, -1 A, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 420 mW, 1 A, 63 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 420 mW, 1 A, 100 hFE

NEXPERIA

单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 100 hFE

NEXPERIA

单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 160 hFE

NEXPERIA

二极管阵列 齐纳, 75 V, 300 mW, -55 °C, 150 °C, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.34 ohm, 13 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V

INFINEON

场效应管, MOSFET

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.012 ohm, 10 V, 4 V

NEXPERIA

双极晶体管阵列, 双PNP, -60 V, 510 mW, -1 A, 70 hFE, SOT-1118

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V

ROHM

晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.066 ohm, 4.5 V, 1.5 V

ROHM

单管二极管 齐纳, 外延平面, 2.4 V, 200 mW, SOD-323F, 2 引脚, 150 °C