
VISHAY
场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚

VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V

VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 1.2KV, 45A

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR
DIODE, SMALL SIGNAL, 200mA, 40V, SOD-923-2

INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB

INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚

NEXPERIA
双极晶体管阵列, 双PNP, -60 V, 510 mW, -2 A, 50 hFE, SOT-1118

NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

ROHM
单管二极管 齐纳, 外延平面, 30 V, 150 mW, SOD-523, 2 引脚, 150 °C

NEXPERIA
双极性晶体管, MED POWER, NPN, 60V, 1A

ON SEMICONDUCTOR
快速恢复二极管, 1A, 100V, 轴向引线

ON SEMICONDUCTOR
双向晶闸管

PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 双共阴极, 80 V, 100 mA, 1.2 V, 10 ns, 750 mA

INFINEON
标准功率二极管, 单, 650 V, 15 A, 1.6 V, 30 ns, 100 A

MICRO COMMERCIAL COMPONENTS
齐纳二极管, 200mW, 5.1V, SOD-323

ON SEMICONDUCTOR
晶闸管, SCR, 8A

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V

VISHAY
场效应管, MOSFET, N沟道

VISHAY
MOSFET, P CHANNEL, -50V, -9.9A, TO-252-3

ON SEMICONDUCTOR
场效应管, JFET, N沟道, -25V, SOT-23