
NEXPERIA
单管二极管 齐纳, 4.3 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

INFINEON
晶体管, IGBT阵列&模块, N沟道, 70 A, 3.2 V, 355 W, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV

INFINEON
晶体管, IGBT阵列&模块, N沟道, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 995 A, 1.75 V, 4.05 kW, 1.2 kV, Module

NTE ELECTRONICS
齐纳二极管, 5W, 5.1V, 轴向引线

NTE ELECTRONICS
标准恢复整流器

NEXPERIA
小信号二极管, 整卷

GENESIC SEMICONDUCTOR
二极管模块, 硅, 1.6 kV, 300 A, 1.2 V, 单路, S300Y Series

IXYS SEMICONDUCTOR
二极管 桥式整流, 单相, 1.2 kV, 31 A, FO-A, 1.8 V, 4 引脚

VISHAY
二极管模块, 2 kV, 320 A, 1.28 V, 单路, VS-VS Series

STMICROELECTRONICS
单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1.5 A, 560 hFE

NEXPERIA
齐纳二极管, 整卷

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV

INFINEON
晶体管, IGBT阵列&模块, N沟道, 340 A, 1.95 V, 1.5 kW, 1.7 kV, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 620 A, 2 V, 2.25 kW, 1.7 kV, Module

GENESIC SEMICONDUCTOR
整流器, 碳化硅肖特基, 1.2KV, 50A, TO-247AC

NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V

SEMIKRON
晶闸管, 1200 V, 340 A, 700 A, TO-200AB, 3 引脚

INFINEON
晶闸管模块, 1.6KV, 180A, 模块

STMICROELECTRONICS
小信号肖特基二极管, 单, 80 V, 500 mA, 420 mV, 3 A, 125 °C

NTE ELECTRONICS
标准二极管, 750MA, 600V, DO-26

ON SEMICONDUCTOR
单管二极管 齐纳, 5.6 V, 225 mW, SOT-23, 2 %, 3 引脚, 150 °C

VISHAY
晶体管, JFET, -40V, TO-236, 整卷