
LITTELFUSE
晶闸管, 600 V, 200 μA, 0.8 A, 800 mA, SOT-223, 4 引脚

NEXPERIA
单晶体管 双极, 双PNP, -65 V, 100 MHz, 200 mW, -100 mA, 200 hFE

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V

NEXPERIA
单管二极管 齐纳, 3.6 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

NEXPERIA
单管二极管 齐纳, 18 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C

DIODES INC.
单晶体管 双极, 达林顿, NPN, 100 V, 140 MHz, 625 mW, 900 mA, 60000 hFE

VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V

TAIWAN SEMICONDUCTOR
肖特基整流器, 50 V, 3 A, 单, DO-214AB, 2 引脚, 750 mV

TAIWAN SEMICONDUCTOR
快速/超快二极管, 300 V, 3 A, 单, 1.3 V, 35 ns, 100 A

VISHAY
肖特基整流器, 单, 60 V, 2 A, SMD, 2 引脚, 700 mV

NEXPERIA
单晶体管 双极, NPN, 60 V, 175 MHz, 390 mW, 3.8 A, 500 hFE

VISHAY
单管二极管 齐纳, 5.6 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C

VISHAY
齐纳二极管, 3W, 10V, DO-214AC

ON SEMICONDUCTOR
单管二极管 齐纳, 2.7 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

NEXPERIA
单管二极管 齐纳, 43 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V

VISHAY
标准功率二极管, 单, 600 V, 1.5 A, 1.3 V, 250 ns, 50 A

VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE

ON SEMICONDUCTOR
快速/超快二极管, 400 V, 1 A, 单, 1.25 V, 50 ns, 35 A

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.0215 ohm, 10 V, 3 V

ROHM
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.6 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 100 V, 2 W, 8 A, 20 hFE