
DIODES INC.
小信号肖特基二极管, 单, 40 V, 1.16 A, 560 mV, 22 A, 150 °C

NEXPERIA
单晶体管 双极, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE

NEXPERIA
单管二极管 齐纳, 22 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
肖特基整流器, 单, 200 V, 3 A, DO-214AB, 2 引脚, 840 mV

ON SEMICONDUCTOR
标准功率二极管, 单, 1 kV, 1 A, 1.75 V, 100 ns, 35 A

IXYS SEMICONDUCTOR
快速/超快二极管, 外延二极管(FRED), 单, 300 V, 60 A, 1.1 V, 35 ns, 550 A

VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV

ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 290 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 1.5 W, -600 mA, 200 hFE

TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 16 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C

TAIWAN SEMICONDUCTOR
快速/超快二极管, 单, 400 V, 1 A, 1.3 V, 35 ns, 30 A

NEXPERIA
单管二极管 齐纳, 13 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V

DIODES INC.
双路场效应管, MOSFET, 双P沟道, -26 A, -60 V, 0.036 ohm, -10 V, -3 V

DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V

DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V

INFINEON
单晶体管, IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-252, 3 引脚

INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V

INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.047 ohm, 10 V, 1.6 V