产品分类：场效应管MOSFET晶体管(600V以上),规格：在电阻RDS（上） 0.16ohm,
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 19 A, 1.2 kV, 0.16 ohm, 20 V, 2.6 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V
(EN)
