产品分类：场效应管MOSFET晶体管(600V以上),规格：电流, Id 连续 21A,
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-247AC-3
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220F
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)
