产品分类：场效应管MOSFET晶体管(600V以上),规格：功耗 Pd 500W,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.39 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 27 A, 600 V, 220 mohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 63.3 A, 650 V, 0.043 ohm, 10 V, 4 V
(EN)
