产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 20V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.05 A, 20 V, 0.14 ohm, 4.5 V, 570 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.175 ohm, 4.5 V, 950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 20 V, 70 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 20 V, 11 mohm, 10 V, 2.1 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.106 ohm, 4.5 V, 950 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 180 mA, 20 V, 1.4 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 20 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 20 V, 0.107 ohm, 2.5 V, 550 mV
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4 A, 20 V, 60 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 255 mA, 20 V, 1.6 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 93 A, 20 V, 0.0045 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, MICRO FOOT-4
(EN)
