产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 2.6V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 300 mohm, -10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 260 mA, 60 V, 1 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 35 V, 0.028 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 120 V, 0.0096 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 50A, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.8 A, 30 V, 0.135 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.055 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 120V, 0.0096OHM, 35A, POWER 56-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)
