产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 500mV,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 5.6 ohm, 2.75 V, 500 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 50V, 200mA SOT-23
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.04 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 12 V, 0.0022 ohm, 4.5 V, 500 mV
(EN)
