产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 28mohm,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 80V, 30A, D-PAKS
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 28 mohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
