产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 0.007ohm,
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.007 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)
SEMIKRON
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.007 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
(EN)
