产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 2.3A,
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 130 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
VISHAY
场效应管, MOSFET, N沟道, 60V, 2.3A, TO-236, 整卷
(EN)INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 2.3 A, 20 V, 0.1 ohm, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.087 ohm, 10 V, 600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)
