产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 1A,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 5 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 1A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1 A, -30 V, 800 mohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.29 ohm, 4.5 V, 700 mV
(EN)
