产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 3.1A,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 400V, 3.1A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 3.1A SOT-223
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.028 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.028 ohm, 10 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
