产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 179W,
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-263-3
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO247AC-3
(EN)
