产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 190W,
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.4 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
