产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 730mW,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 30 V, 0.085 ohm, 10 V, 1.75 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.5A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 1.5A, SOT-23, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.1A, SOT-23
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
