产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 1.25W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 60 V, 0.356 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 3.2A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.098 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
