产品分类：射频场效应管(FET)晶体管,规格：MSL -,
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 3 V, 40 mA, 180 mW, 1.5 GHz, 18 GHz, SOT-363
(EN)
NXP
晶体管, 射频FET, 30 V, 13 mA, 250 mW, SOT-23
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89
(EN)STMICROELECTRONICS
晶体管, 射频FET, 25 V, 2 A, 6 W, 1 GHz, SOT-89
(EN)
NXP
射频场效应管, JFET, N沟道, 30V, 25mA, 3-SOT-23
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2
(EN)
BROADCOM LIMITED
晶体管, 射频FET, Vixen 低噪, 5 V, 100 mA, 300 mW, 500 MHz, 18 GHz, SMD
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 16 A, 590 W, 100 MHz, DE-275
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 24 A, 1.8 kW, 30 MHz, DE-475
(EN)IXYS RF
晶体管, 射频FET, 200 V, 25 A, 590 W, 100 MHz, DE-275
(EN)
IXYS RF
晶体管, 射频FET, 1.2 kV, 8 A, 880 W, DE-375
(EN)
SEMELAB
晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC
(EN)IXYS RF
晶体管, 射频FET, 500 V, 4.5 A, 200 W, 100 MHz, DE-150
(EN)
IXYS RF
晶体管, 射频FET, 1.2 kV, 8 A, 250 W, ISOPLUS247
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 125 V, 20 A, 389 W, 230 MHz, M174
(EN)
SEMELAB
晶体管, 射频FET, 70 V, 5 A, 50 W, 10 MHz, 500 MHz, DP
(EN)IXYS RF
晶体管, 射频FET, 500 V, 44 A, 1.8 kW, 30 MHz, DE-475
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 900 V, 27 MHz, STAC177B
(EN)
NXP
射频晶体管, LDMOS, 100W, NI-780
(EN)
NTE ELECTRONICS
射频场效应管, 双栅极, N沟道, 20V, TO72
(EN)
BROADCOM LIMITED
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 55 A, 600 W, 500 kHz, SOT-227B
(EN)NXP
晶体管, 射频FET, 30 V, 13 mA, 250 mW, SOT-23
(EN)
NXP
功率场效应管, N沟道, HF/VHF, LDMOS, 50V, 10-500MHZ, 4-SOT-539A
(EN)
