产品分类：非易失性RAM,规格：电源电压最小值 4.5V,
CYPRESS SEMICONDUCTOR
芯片, 存储器, FRAM, 64K, I2C, 8SOIC
(EN)
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, SOIC
(EN)
STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 256K
(EN)MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 4 Kbit, 512 x 8位, I2C, SOIC
(EN)CYPRESS SEMICONDUCTOR
芯片, 存储器, FRAM, 16K, I2C, 8SOIC
(EN)
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, DIP
(EN)CYPRESS SEMICONDUCTOR
芯片, 存储器, FRAM, 4K, I2C, 8SOIC
(EN)CYPRESS SEMICONDUCTOR
芯片, 存储器, FRAM, 64K, SPI, 8SOIC
(EN)
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 8K x 8位, 150 ns, EDIP
(EN)
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 256K, 全静态, 1230
(EN)CYPRESS SEMICONDUCTOR
芯片, 存储器, FRAM, 16K, SPI, 8SOIC
(EN)
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
(EN)
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, TSSOP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 8K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 120 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 200 ns, EDIP
(EN)
STMICROELECTRONICS
芯片, SRAM模块, 16Kb, 内含电池
(EN)
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 150 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 70 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 150 ns, EDIP
(EN)
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 1 Mbit, 128K x 8位, 70 ns, PWRCP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 8K x 8位, 70 ns, EDIP
(EN)
