
STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 256K

MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, DIP

STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 16K

MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, DIP

MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 256K, 全静态, 1230

STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 16K

STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K

STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K

STMICROELECTRONICS
芯片, SRAM模块, 16Kb, 内含电池

MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28

STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K

STMICROELECTRONICS
芯片, SRAM, 非易失性, 256K

STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K

MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 4 Kbit, 512 x 8位, I2C, DIP

MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 1024KB, 128KX8, 32EDIP

MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 32K x 8位, 并行, 120 ns, DIP

GREENWICH INSTRUMENTS
芯片, 非易失性存储器模块 256K