规格：在电阻RDS（上） 6ohm,
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
NEXPERIA
场效应管, P通道, DMOS FET, -50V, -130MA, 3-SOT
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -500 V, 6 ohm, 10 V, -3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 170 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 800 mA, 650 V, 6 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
