VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
MULTICOMP
单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.15 ohm, 10 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 378 A, 40 V, 0.00057 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
单晶体管 双极, NPN, 400 V, 50 MHz, 2 W, 500 mA, 50 hFE
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2 mohm, 10 V, 3 V
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.7 V
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
单晶体管 双极, NPN, 400 V, 50 MHz, 500 mW, 225 mA, 100 hFE
齐纳二极管阵列, 3.9V, 300mW, SOT-23
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 10 mA, 1.3 V, TO-92, 8 A
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
晶体管, MOSFET, N沟道, 3.7 A, 20 V, 0.017 ohm, 2.5 V, 550 mV
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
单晶体管 双极, 达林顿, NPN, 400 V, 175 W, 20 A, 50 hFE
(EN)
